Device Simulation
Mozz Device simulates the electrical characteristics of semiconductor devices under electrical, thermal and optical stimuli. It is equiped with a hierarchy of incrementally more detailed physical models and supports a large collections of materials.
Applications
Mozz Device is suited for analyzing and optimizing a wide range of semiconductor devices.
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Devices
- Logic, memory, analog and RF
- Bulk, SOI, FinFET and nano-sheet FETs
- SRAM, Flash and DRAM memory cells and mini-array
- SiGe HBT, GaAs, InP and GaN HEMT
- Power and renewable energy
- LDMOS, VDMOS, IGBT and other Si-based power devices
- GaN HEMT, SiC and Ga2O3 MOSFET
- Silicon photovoltaic and multi-junction solar cells
- Silicon photonics and optoelectronics
- CCD, APS, SPAD and other image censors
- detectors, modulators and other silicon photonic devices
- SOA, FP laser, DFB laser and other III-V optoelectronic devices