Device Simulation

Mozz Device simulates the electrical characteristics of semiconductor devices under electrical, thermal and optical stimuli. It is equiped with a hierarchy of incrementally more detailed physical models and supports a large collections of materials.

Applications

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Mozz Device is suited for analyzing and optimizing a wide range of semiconductor devices.

  • Devices
    • Logic, memory, analog and RF
    • Bulk, SOI, FinFET and nano-sheet FETs
    • SRAM, Flash and DRAM memory cells and mini-array
    • SiGe HBT, GaAs, InP and GaN HEMT
    • Power and renewable energy
    • LDMOS, VDMOS, IGBT and other Si-based power devices
    • GaN HEMT, SiC and Ga2O3 MOSFET
    • Silicon photovoltaic and multi-junction solar cells
    • Silicon photonics and optoelectronics
    • CCD, APS, SPAD and other image censors
    • detectors, modulators and other silicon photonic devices
    • SOA, FP laser, DFB laser and other III-V optoelectronic devices

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